FEMTOSECOND STUDY OF CARRIER COOLING AND EXCITON FORMATION IN THE LAYERED III-VI SEMICONDUCTOR GASE

Authors
NUSSE S BOLIVAR PH KURZ H KLIMOV V LEVY F
Citation
S. Nusse et al., FEMTOSECOND STUDY OF CARRIER COOLING AND EXCITON FORMATION IN THE LAYERED III-VI SEMICONDUCTOR GASE, Physica status solidi. b, Basic research, 204(1), 1997, pp. 98-101
Citations number
14
Journal title
Physica status solidi. b, Basic research → ACNP
ISSN journal
03701972
Volume
204
Issue
1
Year of publication
1997
Pages
98 - 101
Database
ISI
SICI code
0370-1972(1997)204:1<98:FSOCCA>2.0.ZU;2-S
Abstract
We give a comprehensive study of carrier cooling and exciton formation in GaSe using femtosecond time-resolved photoluminescence. Tile initi al subpicosecond cooling of hot carriers is due to the Frohlich intera ction with longitudinal optical E' phonons and is followed by a slower cooling process dominated by the deformation potential interaction wi th nonpolar optical A(1)' phonons. The subsequent formation of exciton s and their spectral relaxation is studied at different carrier densit ies, detection energies and lattice temperatures.