DIRECT OBSERVATION OF ELECTRON VELOCITY OVERSHOOT IN AN INP P-I-N NANOSTRUCTURE SEMICONDUCTOR - A SUBPICOSECOND RAMAN PROBE

We have studied the transient electron transport in an InP p-i-n nanos tructure semiconductor by using subpicosecond Raman spectroscopy at T = 300 K. Both the non-equilibrium electron distribution and electron d rift velocity in the regime of electron velocity overshoot have been d irectly measured. It is demonstrated that electron drift velocity in a n InP p-i-n nanostructure is significantly larger than that in a GaAs p-i-n nanostructure sample, as a result of the larger central to satel lite valley energy separation in InP.