PROSPECTS OF GA IN/AL-N NANOMETER DEVICES - ELECTRONIC-STRUCTURE, SCATTERING RATES, AND HIGH-FIELD TRANSPORT/

Employing first principles electronic structure calculations, we predi ct electronic band parameters in wide gap nitrides that are relevant f or high field transport. We assess the potential of nitrides for high speed and power electronic devices by performing self-consistent Monte Carlo simulations of nanometer gate heterostructure field effect tran sistors. We find a significant and favorable influence of the piezoele ctric fields that are induced by the inevitable interface strain betwe en channel and buffer material on the transistor characteristics. Tran sit time frequencies of up to 300 GHz and transconductances of 1kS/m a re predicted.