FAR-INFRARED HOLE ABSORPTION IN INXGA1-XAS GAAS MQW HETEROSTRUCTURES WITH DELTA-DOPED BARRIERS/

Authors
SHASTIN VN PAVLOV SG MURAVJOV AV ORLOVA EE ZHUKAVIN RK ZVONKOV BN
Citation
Vn. Shastin et al., FAR-INFRARED HOLE ABSORPTION IN INXGA1-XAS GAAS MQW HETEROSTRUCTURES WITH DELTA-DOPED BARRIERS/, Physica status solidi. b, Basic research, 204(1), 1997, pp. 174-177
Citations number
2
Journal title
Physica status solidi. b, Basic research → ACNP
ISSN journal
03701972
Volume
204
Issue
1
Year of publication
1997
Pages
174 - 177
Database
ISI
SICI code
0370-1972(1997)204:1<174:FHAIIG>2.0.ZU;2-N
Abstract
Far-infrared optical properties of the InxGa1-xAs/GaAs:C MQW delta-dop ed heterostructures have been investigated under lateral electric fiel d at liquid helium temperature. Hot hole p-Ge laser (50 to 125 cm(-1)) intracavity absorption method has been used. The resonant increase of the FIR transparency of the heterostructure under applied electric fi eld is observed. The effect is explained by the amplification on optic al transitions from excited impurity states to QW states due to the sp atial overlap of their wavefunctions.