HOT-ELECTRON SCATTERING RATE IN P-DOPED MQW STRUCTURES GAAS ALAS/

We have studied inelastic hot-electron scattering due to interaction w ith neutral accepters accompanied by their excitation and ionization. Comparative studies of narrow GaAs/AlAs multiple quantum wells and bul k GaAs films were performed in the concentration range of neutral acce pters 10(18) to 10(19) cm(-3). The method of hot photoluminescence dep olarization in an applied magnetic field was utilized. The scattering cross-section in multiple quantum wells was shown to be four times sma ller than in the bulk samples. A theoretical model of hot-electron sca ttering by accepters in a quantum well was developed that explains sat isfactorily the experimental results.