PHOTOLUMINESCENCE FROM INGAAS GAAS MQW HETEROSTRUCTURES UNDER REAL-SPACE TRANSFER/

Authors
REVIN DG ALESHKIN VY ANDRONOV AA GAPONOVA DM GAVRILENKO VI MALKINA IG USKOVA EA ZVONKOV BN
Citation
Dg. Revin et al., PHOTOLUMINESCENCE FROM INGAAS GAAS MQW HETEROSTRUCTURES UNDER REAL-SPACE TRANSFER/, Physica status solidi. b, Basic research, 204(1), 1997, pp. 184-186
Citations number
2
Journal title
Physica status solidi. b, Basic research → ACNP
ISSN journal
03701972
Volume
204
Issue
1
Year of publication
1997
Pages
184 - 186
Database
ISI
SICI code
0370-1972(1997)204:1<184:PFIGMH>2.0.ZU;2-7
Abstract
Lateral electric field (up to 2 kV/cm) effects on the band gap photolu minescence from selectively doped p-type MQW InxGa1-x As/GaAs heterost ructures under red space transfer have been studied. Peculiarities of the photoluminescence spectra associated with hole heating and escape from quantum wells to barriers have been observed.