ELECTRON-MOBILITY ENGINEERING IN 2D STRUCTURES

Authors
POZELA J JUCIENE V NAMAJUNAS A POZELA K
Citation
J. Pozela et al., ELECTRON-MOBILITY ENGINEERING IN 2D STRUCTURES, Physica status solidi. b, Basic research, 204(1), 1997, pp. 238-240
Citations number
4
Journal title
Physica status solidi. b, Basic research → ACNP
ISSN journal
03701972
Volume
204
Issue
1
Year of publication
1997
Pages
238 - 240
Database
ISI
SICI code
0370-1972(1997)204:1<238:EEI2S>2.0.ZU;2-X
Abstract
The electron mobility determined by electron-confined optical phonon s cattering in GaAs quantum well (QW) of AlGaAs/GaAs/AlGaAs double heter ojunction structure (DI-IS) is considered. The mobility increase due t o intersubband population redistribution in the DHS with an inserted p honon wall is obtained. In the modulation doped. DHS (n(s) = 6 x 10(15 ) m(-2)) the mobility decrease is observed when the GaAs QW width beco mes less than 15 nm.