HIGH-SPEED QUASI-ONE-DIMENSIONAL ELECTRON-TRANSPORT IN INAS ALGASB MESOSCOPIC DEVICES/

Citation
T. Maemoto et al., HIGH-SPEED QUASI-ONE-DIMENSIONAL ELECTRON-TRANSPORT IN INAS ALGASB MESOSCOPIC DEVICES/, Physica status solidi. b, Basic research, 204(1), 1997, pp. 255-258
Citations number
8
ISSN journal
03701972
Volume
204
Issue
1
Year of publication
1997
Pages
255 - 258
Database
ISI
SICI code
0370-1972(1997)204:1<255:HQEIIA>2.0.ZU;2-C
Abstract
Fabrication and quasi-one-dimensional transport properties in InAs/AlG aSb quantum wires (QWs) are reported. A lateral superlattice with peri odic structures along the wire was made by oxidation process by using atomic force microscope (AFM). InAs single and multiple QWs were made by using conventional photolithography and magnetoresistance of these QWs have been measured at 4.2 K. High-field electron transport in QW t ransistors is also reported.