3D-SIMULATION OF NOVEL QUANTUM-WIRE TRANSISTORS

The output characteristics and the electronic behaviour of a quantum w ire transistor (QWT) with a 1DEG channel have been simulated. The elec tron transport processes in the QWT are mainly influenced by quantum m echanical effects. A coupled microscopic/macroscopic simulation algori thm is used to calculate the electron density distribution in the elec tron gas under consideration of the confinement of the electrons. This algorithm includes the self-consistent solution of the Poisson and th e Schrodinger equation.