THE EFFECTS OF ELECTRON SCREENING LENGTH AND EMITTER QUASI-BOUND STATES ON THE POLAR-OPTICAL PHONON-SCATTERING IN RESONANT-TUNNELING DIODES

Authors
KLIMECK G LAKE R BLANKS D FERNANDO CL BOWEN C MOISE T KAO YC
Citation
G. Klimeck et al., THE EFFECTS OF ELECTRON SCREENING LENGTH AND EMITTER QUASI-BOUND STATES ON THE POLAR-OPTICAL PHONON-SCATTERING IN RESONANT-TUNNELING DIODES, Physica status solidi. b, Basic research, 204(1), 1997, pp. 408-411
Citations number
11
Journal title
Physica status solidi. b, Basic research → ACNP
ISSN journal
03701972
Volume
204
Issue
1
Year of publication
1997
Pages
408 - 411
Database
ISI
SICI code
0370-1972(1997)204:1<408:TEOESL>2.0.ZU;2-5
Abstract
Polar optical phonon (POP) scattering is one of the dominant scatterin g mechanisms contributing to the valley current in GaAs and InP based resonant tunneling diodes (RTDs). fe systematically explore two model parameters which determine the strength of the POP scattering enhanced valley current: 1. the electron screening length and 2. the length of the Emitter electron accumulation region included in the simulation. When emitter quasi-bound states are included in the simulation,reasona ble agreements with experiment can be obtained with screening lengths of 15 to 30 nm.