THEORY OF ELECTRON RESONANT-TUNNELING THROUGH LOCALIZED STATES IN THEPRESENCE OF HOT ACOUSTIC PHONONS

We use nonequilibrium Green functions to consistently describe electro n resonant tunnelling through localized states in the presence of hot phonons. Thereby we are able to study in details effects related to no nequilibrium steady-states of such systems; in the presence of de bias and hot phonon fields. The method is applied to a model of a delta-do ped GaAs/A1GaAs double barrier heterostructure, where simulation of th e hot phonons is performed by the change of their distribution functio n. The results are in qualitative agreement with the recent experiment s performed on similar systems.