A. Matulionis et al., QW-SHAPE-DEPENDENT HOT-ELECTRON VELOCITY FLUCTUATIONS IN INGAAS-BASEDHETEROSTRUCTURES, Physica status solidi. b, Basic research, 204(1), 1997, pp. 453-455
Hot-electron microwave noise was measured for InAlAs/InGaAs/InAlAs/InP
quantum well channels containing two-dimensional electron gas subject
ed to high electric field applied parallel to the heterojunctions. The
shape of the well was controlled by doping and InGaAs composition. A
quasitriangular well was formed by using a plane of donors located in
the InAlAs barrier. A quasi-rectangular well was obtained by locating
two planes of the donors on both sides of the well. A strong dependenc
e on the well shape is observed at high electric fields (over 2 kV/cm)
. The results are interpreted in terms of real-space transfer fluctuat
ions.