MONTE-CARLO ANALYSIS OF SHOT-NOISE SUPPRESSION IN TUNNELING TRANSPORTTHROUGH SEMICONDUCTOR HETEROSTRUCTURES

Authors
REKLAITIS A REGGIANI L
Citation
A. Reklaitis et L. Reggiani, MONTE-CARLO ANALYSIS OF SHOT-NOISE SUPPRESSION IN TUNNELING TRANSPORTTHROUGH SEMICONDUCTOR HETEROSTRUCTURES, Physica status solidi. b, Basic research, 204(1), 1997, pp. 459-461
Citations number
9
Journal title
Physica status solidi. b, Basic research → ACNP
ISSN journal
03701972
Volume
204
Issue
1
Year of publication
1997
Pages
459 - 461
Database
ISI
SICI code
0370-1972(1997)204:1<459:MAOSSI>2.0.ZU;2-C
Abstract
We present a Monte Carlo study of shot-noise suppression in single and double barrier non-resonant heterostructure GaAs/AlGaAs diodes. For t he double diode we provide an original microscopic explanation of the suppression mechanism. Peaks in the frequency dependence of the curren t spectral density are associated with deterministic features of the c arrier motion due to reflections from the first barrier and oscillatio ns inside the GaAs well, respectively.