MONTE-CARLO ANALYSIS OF SI SIGE MODFET PERFORMANCE POTENTIAL/

Authors
ROY S ASENOV A BABIKER S BARKER JR BEAUMONT SP
Citation
S. Roy et al., MONTE-CARLO ANALYSIS OF SI SIGE MODFET PERFORMANCE POTENTIAL/, Physica status solidi. b, Basic research, 204(1), 1997, pp. 525-527
Citations number
4
Journal title
Physica status solidi. b, Basic research → ACNP
ISSN journal
03701972
Volume
204
Issue
1
Year of publication
1997
Pages
525 - 527
Database
ISI
SICI code
0370-1972(1997)204:1<525:MAOSSM>2.0.ZU;2-C
Abstract
The microwave performance potential of Si/Si1-xGex pseudomorphic MODFE Ts is compared to that of the latest In0.3Ga0.7As pseudomorphic HEMTs, using simulations based on transient Monte Carlo calculations and acc ounting for realistic device parasitics. The potential cut-off frequen cy of the MODFETs approach half that of the HEMTs, corresponding to th e ratio of their channel velocities. However, the maximum frequency of oscillation advantages of the HEMT are sharply eroded when realistic parasitics are considered.