FAR-INFRARED EMISSION AND ABSORPTION (AMPLIFICATION) UNDER REAL-SPACETRANSFER AND POPULATION-INVERSION IN SHALLOW MULTI-QUANTUM-WELLS

Authors
ALESHKIN VY ANDRONOV AA ANTONOV AV BEKIN NA GAVRILENKO VI MURAVEV AV PAVLOV SG REVIN DG SHASTIN VN MALKINA IG USKOVA EA ZVONKOV BN
Citation
Vy. Aleshkin et al., FAR-INFRARED EMISSION AND ABSORPTION (AMPLIFICATION) UNDER REAL-SPACETRANSFER AND POPULATION-INVERSION IN SHALLOW MULTI-QUANTUM-WELLS, Physica status solidi. b, Basic research, 204(1), 1997, pp. 563-565
Citations number
3
Journal title
Physica status solidi. b, Basic research → ACNP
ISSN journal
03701972
Volume
204
Issue
1
Year of publication
1997
Pages
563 - 565
Database
ISI
SICI code
0370-1972(1997)204:1<563:FEAA(U>2.0.ZU;2-X
Abstract
Conditions for population inversion between continuum and bound states of a ''shallow'' quantum well in a selectively doped multi-quantum-we ll system at high lateral electric field are analyzed in a two tempera ture model. Experimental data on far infrared emission and absorption under real space transfer (RST) in p-type delta-doped InxGa1-xAs/GaAs MQWs, which indirectly confirmed existence of hot hole population inve rsion, are presented.