CARRIER TRANSPORT IN INP-BASED LASERS, MODULATORS, AND OPTICAL SWITCHING DEVICES

Authors
HANGLEITER A GEIGER M KNORR C KONIG P OTTENWALDER D RIEDL T SCHOLZ F ZIMMERMANN M HILLMER H STEINHAGEN F BURKHARD H
Citation
A. Hangleiter et al., CARRIER TRANSPORT IN INP-BASED LASERS, MODULATORS, AND OPTICAL SWITCHING DEVICES, Physica status solidi. b, Basic research, 204(1), 1997, pp. 570-573
Citations number
7
Journal title
Physica status solidi. b, Basic research → ACNP
ISSN journal
03701972
Volume
204
Issue
1
Year of publication
1997
Pages
570 - 573
Database
ISI
SICI code
0370-1972(1997)204:1<570:CTIILM>2.0.ZU;2-Z
Abstract
Carrier transport effects of various kinds provide an important perfor mance limitation to InP-based semiconductor lasers, modulators, and op tical switching devices. We demonstrate how thermally activated tunnel ing dominates the hole transport in InGaAs/InGaAsP/InP optical switchi ng structures. For InGaAs/InGaAlAs quantum well lasers, we show that a carrier culture time into the quantum wells of about 1.5 ps severely Limits the modulation performance.