DIRECT OBSERVATION IN THE TEMPORAL DOMAIN OF RELAXATION OSCILLATIONS IN A SEMICONDUCTOR-LASER

Authors
HESSLER T HAACKE S PLEUMEEKERS JL SELBMANN PE DUPERTUIS MA DEVEAUD B DOUSSIERE P BACHMANN M EMERY JY DUCELLIER T TAYLOR RA
Citation
T. Hessler et al., DIRECT OBSERVATION IN THE TEMPORAL DOMAIN OF RELAXATION OSCILLATIONS IN A SEMICONDUCTOR-LASER, Physica status solidi. b, Basic research, 204(1), 1997, pp. 574-576
Citations number
6
Journal title
Physica status solidi. b, Basic research → ACNP
ISSN journal
03701972
Volume
204
Issue
1
Year of publication
1997
Pages
574 - 576
Database
ISI
SICI code
0370-1972(1997)204:1<574:DOITTD>2.0.ZU;2-V
Abstract
Pump and Probe measurements with femtosecond pulses are performed on a Gain-Clamped Semiconductor Optical Amplifier (a special laser structu re). The relaxation oscillations of the carriers density are observed directly in the time domain, Reasonable values of the differential gai n and the nonlinear gain factors are extracted from the current depend ence of tile oscillations.