INTERWELL CARRIER DISTRIBUTION IN INALGAAS QUANTUM-WELL LASER STRUCTURES

Interwell carrier transport and distribution has been studied at room temperature by time-resolved photoluminescence in custom-designed InAl GaAs/InP quantum well laser structures with an enlarged well. The expe riments have been successfully described by a model which includes the rmionic capture/emission over the quantum well interfaces and drift/di ffusion in the barrier regions. In the InAlGaAs structures, a consider able increase of the interwell carrier transport velocity, as compared to InGaAsP, is observed.