SEPARATION BY PLASMA IMPLANTATION OF OXYGEN (SPIMOX) OPERATIONAL PHASE-SPACE

Separation by plasma implantation of oxygen (SPIMOX) as been suggested as an economic alternative for separation by implantation of oxygen ( SIMOX) to form the silicon-on-insulator (SOI) structure. The chief adv antage of SPIMOX is the high throughput and low-cost implanter. The op eration regime of implantation for SPIMOX, which uses dc plasma immers ion ion implantation (PIII) for the oxygen implantation, has been stud ied in the phase space of implantation time and chamber pressure durin g implantation. The phase space is developed for a definite implantati on voltage and dose which are dependent on the dimensions of the SOI s tructure to be fabricated. The effect of dose, implantation voltage, a nd fractional ionization on the phase space have been discussed. SPIMO X can achieve high throughputs for thin-SOI structure fabrications usi ng fractional ionization plasmas. The phase space developed for SPIMOX implantation can also be used for other high-dose dc implantations wi th PIII which require a peaked implant profile below the surface.