MAGNETIC-FIELD EFFECTS ON BORON-DOPED SI OSCILLATORS

Authors
BIGGAR RD PARPIA JM
Citation
Rd. Biggar et Jm. Parpia, MAGNETIC-FIELD EFFECTS ON BORON-DOPED SI OSCILLATORS, Physical review. B, Condensed matter, 56(21), 1997, pp. 13638-13641
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
56
Issue
21
Year of publication
1997
Pages
13638 - 13641
Database
ISI
SICI code
0163-1829(1997)56:21<13638:MEOBSO>2.0.ZU;2-T
Abstract
We have measured the mechanical properties of single-crystal silicon d oped with boron (acceptor) impurities. A low-temperature doping-depend ent increase in dissipation is observed, accompanied by a period shift . With increasing magnetic field, the dissipation and period shift are eliminated. These results confirm an electronic origin for the dissip ation, consistent with the attenuation observed elsewhere in ultrasoun d in boron-doped silicon.