THE GAS COMBUSTION OF H-2 WITH N2O USED FOR RAPID THERMAL ANNEALING

The gas combustion of H-2 with N2O was investigated to develop a rapid thermal annealing method. Spectra of the light emission caused by the combustion show a gray body irradiation characteristic with a gas tem perature of 2200 K with an initial total gas pressure of 500 Torr ([H- 2]/[N2O] = 1). A transient thermometry with a 100-nm-thick Cr film as a temperature sensor formed on a quartz substrate was used to measure temperature changes at the surface during and after combustion, Heatin g to 800 degrees C was achieved within 2 ms using a substrate preheate d to 300 degrees C, The increase of electrical conductivity was achiev ed from 4 x 10(-7) S/cm to 7 x 10(-4) S/cm by the combustion for 0.5% phosphorus-doped amorphous silicon films.