PHOTOLUMINESCENCE OF 3C-SIC EPILAYERS GROWN ON LATTICE-MATCHED SUBSTRATES

The photoluminescence (PL) spectra of 3C-SiC epilayers grown on 15R-Si C and on 3C-SiC were measured. The PL spectra show strong exciton-rela ted peaks and weak impurity-related peaks. The epilayers are of high q uality and have a low density of impurities. Peaks clue to excitons bo und to neutral nitrogen showed very little shift induced by strain. Pe aks considered to be due to free exciton recombination were observed a nd analyzed. Defect-related bands, usually observed for 3C-SiC grown o n Si: were not observed. Although weak defect-related peaks were still observed, the epilayers have a lower density of defects than those on Si.