The dependence of SiNx Blm growth on the initial energy was investigat
ed theoretically using a statistical model based on nonempirical molec
ular orbital results. Our theoretical calculations successfully explai
n the experimental finding that it is easier to control the ratio of S
i-N and Si-Si bond yields when a mixture oi SiH2Cl2 and NH3 rather tha
n that of SiH4 and NH3 is used as the source gas.