THEORETICAL INVESTIGATION ON SILICON-NITRIDE FILM GROWTH - STATISTICAL APPROACH

Authors
KOSEKI S ISHITANI A FUJIMURA Y
Citation
S. Koseki et al., THEORETICAL INVESTIGATION ON SILICON-NITRIDE FILM GROWTH - STATISTICAL APPROACH, JPN J A P 1, 36(10), 1997, pp. 6518-6522
Citations number
34
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
36
Issue
10
Year of publication
1997
Pages
6518 - 6522
Database
ISI
SICI code
Abstract
The dependence of SiNx Blm growth on the initial energy was investigat ed theoretically using a statistical model based on nonempirical molec ular orbital results. Our theoretical calculations successfully explai n the experimental finding that it is easier to control the ratio of S i-N and Si-Si bond yields when a mixture oi SiH2Cl2 and NH3 rather tha n that of SiH4 and NH3 is used as the source gas.