Y. Yang et al., EFFECT OF THERMAL ANNEALING ON THE MICROSTRUCTURE OF YTTERBIUM-IMPLANTED SILICON-WAFERS, Journal of Materials Science, 32(24), 1997, pp. 6665-6670
Ytterbium-implanted Si(001) wafers annealed at different temperatures
(800, 900, 1000 and 1200 degrees C) have been examined by means of cro
ss-section transmission electron microscopy (XTEM) and electron diffra
ction. The results indicate that two layers of defects exist in the sa
mples, one mainly includes microtwins and the other includes ytterbium
precipitates. The distribution and morphology of the defects depend m
ostly on the thermal annealing: the higher the annealing temperature,
the larger the size of the defects and the closer are the layers of de
fects to the wafer surface. High-resolution images show the different
characteristics and details of the defects under various annealing con
ditions. The relation between microstructure and luminescence response
is also discussed.