PHOTON-STIMULATED ION DESORPTION FROM DCOO SI(100) NEAR THE O K-EDGE/

Citation
Hi. Sekiguchi et T. Sekiguchi, PHOTON-STIMULATED ION DESORPTION FROM DCOO SI(100) NEAR THE O K-EDGE/, Surface science, 390(1-3), 1997, pp. 214-218
Citations number
25
Journal title
ISSN journal
00396028
Volume
390
Issue
1-3
Year of publication
1997
Pages
214 - 218
Database
ISI
SICI code
0039-6028(1997)390:1-3<214:PIDFDS>2.0.ZU;2-U
Abstract
Photon-stimulated ion desorption from deuterated formic acid chemisorb ed on Si(100) has been studied using pulsed synchrotron radiation in t he energy region of the oxygen Is electron excitation. The O Is electr ons of hydroxyl oxygen and carbonyl oxygen could be selectively excite d in the O K-edge region because the chemical environments are differe nt. It is found that the CDO yield is enhanced at the O Is(C-O)-->sig ma(C-O) resonance and the CD+ yield at the O Is(C=O)-->sigma*(C-O) re sonance. The results indicate that inn desorption is related both to t he antibonding character of excited molecular orbitals and the local c haracter of core hole orbitals. (C) 1997 Elsevier Science B.V.