RESONANT RAMAN-SCATTERING BY INTERFACE PHONONS IN TYPE-II GAAS ALAS SUPERLATTICES/

In this paper, we present resonant Raman scattering experiments on typ e II GaAs/AlAs superlattices of short period. Doubly resonant Raman sc attering processes of symmetric and antisymmetric interface modes are specified and discussed within disorder effects. Evolution of the inte rface mode frequencies and the shape of Raman peaks vs AlAs layer widt hs are studied. The selection rule of symmetric and antisymmetric inte rface modes is established. Finally, lateral extends of in-plane micro -roughnesses are estimated. (C) 1997 Published by Elsevier Science Ltd .