ELECTRONIC RAMAN-SPECTRA OF SHALLOW ACCEPTORS IN P-TYPE INP

Electronic Raman scattering is used to study shallow accepters in Zn-d oped and Cd-doped p-type semiconducting InP in the temperature range b etween 10K and 160K. Well-resolved spectra for the Zn-doped samples ar e obtained. The transition energies are compared with photoluminescenc e results from the literature and show a satisfying agreement. The acc eptor concentrations of the samples investigated range between 2 . 10( 16)cm(-3) and 9 . 10(17)cm(-3). A linear correlation between the norma lized intensity of the electronic spectrum and the acceptor concentrat ion is found. (C) 1997 Elsevier Science Ltd.