SILICON ETCHING ON THE CATHODE IN A CHLORINE GLOW-DISCHARGE

The features of chlorine plasma interaction with a silicon single crys tal on the cathode in a glow discharge were studied. It was shown that the interaction of chlorine with silicon in the range 540-670 K follo wed the first-order rate law and was characterized by complete removal of reaction products from the surface. The actual process of silicon etching is complex in nature and constitutes the combination of chemic al interaction of chlorine atoms and ions produced in the discharge an d ion cleaning of active sites.