REDUCED LATERAL CARRIER DIFFUSION FOR IMPROVED MINIATURE SEMICONDUCTOR-LASERS

The desire to fabricate very small semiconductor lasers requires that we address problems associated with surface recombination. We have pro posed and demonstrated a segmented quantum well active region in which lateral diffusion is intentionally reduced. Such a structure should p revent the transfer of electrons and holes from the interior of a lase r device to the edges. The supply of carriers to surface-related carri er traps can thus be eliminated, and we need not concern ourselves wit h the electrical quality of the surfaces. In this work we present calc ulations which predict laser performance for various lateral diffusion conditions. (C) 1997 American Institute of Physics.