ELECTRON-PARAMAGNETIC-RESONANCE STUDY OF AMORPHOUS-SILICON PRODUCED BY KR-IMPLANTATION INTO SILICON( ION)

A detailed analysis of the electon paramagnetic resonance line shape w as performed on amorphous Si samples obtained by Kr+ ion implantation. The Lorentzian character and behavior upon annealing was explained vi a a strong exchange interaction, leading to a cluster model for the sp in density distribution. The saturation measurements are shown to be a convenient method to study structural changes caused by thermal annea ling. The spin density distribution (as described with the cluster mod el) imposes a clear difference between amorphous Si material obtained by ion implantation and one obtained by evaporation and/or chemical va por deposition. (C) 1997 American Institute of Physics.