M. Finot et al., LARGE-DEFORMATION AND GEOMETRIC INSTABILITY OF SUBSTRATES WITH THIN-FILM DEPOSITS, Journal of applied physics, 81(8), 1997, pp. 3457-3464
Experimental and theoretical results are presented on the evolution of
large elastic deformation, non-uniform curvature, shape changes and g
eometric instability in substrates of Si wafers with metal films. The
critical diameter and thickness of the Si wafer, for which large defor
mation and shape instability occur, are identified, as functions of th
e line tension in the film (which is the product of the biaxial stress
in the film and the film thickness). Observations of the curvature an
d shape variations along the wafer diameter and geometry-dependence of
the shape instability compare favorably with those predicted by detai
led finite element analyses. (C) 1997 American Institute of Physics.