GROWTH AND CHARACTERIZATION OF PHOSPHORUS-DOPED DIAMOND FILMS USING TRIMETHYL PHOSPHITE AS THE DOPING SOURCE

Authors
ROYCHOUDHURY R CHARLSON EJ STACY T HAJSAID M CHARLSON EM MEESE JM
Citation
R. Roychoudhury et al., GROWTH AND CHARACTERIZATION OF PHOSPHORUS-DOPED DIAMOND FILMS USING TRIMETHYL PHOSPHITE AS THE DOPING SOURCE, Journal of applied physics, 81(8), 1997, pp. 3644-3646
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
81
Issue
8
Year of publication
1997
Part
1
Pages
3644 - 3646
Database
ISI
SICI code
0021-8979(1997)81:8<3644:GACOPD>2.0.ZU;2-E
Abstract
Phosphorus doped polycrystalline diamond films were grown by hot-filam ent chemical vapor deposition using trimethyl phosphite as the doping source. Phosphorus incorporation into the diamond films was establishe d using secondary ion mass spectroscopy. Current-voltage characteristi cs were measured and the resistivities of the films were found to be o f the order of 10(12) Omega cm at room temperature. The diamond films gave indications of n-type behavior when electron beam induced current studies were performed. (C) 1997 American Institute of Physics.