IMPURITY STRIATIONS DURING BRIDGMAN GROWTH OF INSB

Authors
POTARD C DUSSERRE P DUFFAR T
Citation
C. Potard et al., IMPURITY STRIATIONS DURING BRIDGMAN GROWTH OF INSB, Crystal research and technology, 32(7), 1997, pp. 925-929
Citations number
10
Journal title
Crystal research and technology → ACNP
ISSN journal
02321300
Volume
32
Issue
7
Year of publication
1997
Pages
925 - 929
Database
ISI
SICI code
0232-1300(1997)32:7<925:ISDBGO>2.0.ZU;2-8
Abstract
InSb single crystals have been grown by the gradient freeze method. St riations close to the seeding interface have been evidenced by X-ray t opography and correlated to temperature and growth rate oscillations. It is shown that these striations are related to light impurity segreg ations and that a non-linear process should be taken into account to e xplain the phenomena.