N. Babaali et al., ARSENIC PRESSURE-DEPENDENCE OF GROUP-III ATOM INTERDIFFUSION IN GAAS-ALAS SINGLE-WELL HETEROSTRUCTURES, Journal of materials science. Materials in electronics, 6(3), 1995, pp. 127-134
Annealing experiments were performed on undoped GaAs-AIAs single well
heterostructures grown by MBE. The annealing experiments were performe
d in evacuated and sealed silica ampoules. The temperature and time of
annealing were fixed at 1000 degrees C and 4 h respectively while the
As vapour pressure in the ampoules was varied from dissociative press
ure to approximately 1.08 x 10(5) Pa. Compositional profiles were obta
ined using dynamic SIMS. It was found that the amount of intermixing i
n the layers was dependent both on As pressure and distance from the s
ample surface. In contrast with previous results, the complex variatio
n of interdiffusion with AS pressure observed in this work cannot be i
nterpreted in terms of interdiffusion via group III vacancies and inte
rstitials only.