Yf. Lu et al., THEORETICAL-ANALYSIS OF LASER-INDUCED PERIODIC STRUCTURES AT SILICON-DIOXIDE SILICON AND SILICON-DIOXIDE/ALUMINUM INTERFACES/, Applied physics letters, 71(23), 1997, pp. 3439-3440
An analytical model was established to predict the laser-induced perio
dic structures at silicon-dioxide/silicon and silicon-dioxide/aluminum
interfaces. The freezing of surface waves is considered the dominant
mechanism for ripple formation. The model precisely predicts a linear
relationship between the interface periodicity and the silicon dioxide
thickness. The ripple periodicity in the substrates can hence be adju
sted by varying the thickness of SiO2 overlayer. This process is expec
ted to be useful in laser microtexturing for magnetic media of high st
orage density, which requires microtextures to be well controlled with
in a certain roughness to prevent a stiction failure. The theoretical
calculation has a good agreement with the experimental results. (C) 19
97 American Institute of Physics.