THEORETICAL-ANALYSIS OF LASER-INDUCED PERIODIC STRUCTURES AT SILICON-DIOXIDE SILICON AND SILICON-DIOXIDE/ALUMINUM INTERFACES/

Authors
Citation
Yf. Lu et al., THEORETICAL-ANALYSIS OF LASER-INDUCED PERIODIC STRUCTURES AT SILICON-DIOXIDE SILICON AND SILICON-DIOXIDE/ALUMINUM INTERFACES/, Applied physics letters, 71(23), 1997, pp. 3439-3440
Citations number
6
Journal title
ISSN journal
00036951
Volume
71
Issue
23
Year of publication
1997
Pages
3439 - 3440
Database
ISI
SICI code
0003-6951(1997)71:23<3439:TOLPSA>2.0.ZU;2-4
Abstract
An analytical model was established to predict the laser-induced perio dic structures at silicon-dioxide/silicon and silicon-dioxide/aluminum interfaces. The freezing of surface waves is considered the dominant mechanism for ripple formation. The model precisely predicts a linear relationship between the interface periodicity and the silicon dioxide thickness. The ripple periodicity in the substrates can hence be adju sted by varying the thickness of SiO2 overlayer. This process is expec ted to be useful in laser microtexturing for magnetic media of high st orage density, which requires microtextures to be well controlled with in a certain roughness to prevent a stiction failure. The theoretical calculation has a good agreement with the experimental results. (C) 19 97 American Institute of Physics.