POLY(3-HEXYLTHIOPHENE)-ZINC OXIDE RECTIFYING JUNCTIONS

The rectifying junction formed at the interface of solvent-cast, as-pr epared poly(3-hexylthiophene) (P3HT) and conductive ZnO-coated glass w as investigated by recording the I-V and C-V characteristics. The data have been discussed in terms of the Schottky thermionic-emission curr ent transport model. The diode ''quality factor'' determined for these devices was 3.6, and indicated imperfect model fitting. The Schottky barrier was estimated as 0.93 eV. A negative differential resistance r egime was observed for P3HT/ZnO devices under reverse-bias high-field conditions. This effect was concluded to be a filament-formation burno ut failure process.