THEORETICAL-ANALYSIS OF IMPURITY DISTRIBUTIONS IN CRYSTALLINE SILICON

Authors
PONOMAREV KV KORZHAVYI PA VEKILOV YK
Citation
Kv. Ponomarev et al., THEORETICAL-ANALYSIS OF IMPURITY DISTRIBUTIONS IN CRYSTALLINE SILICON, Physics of the solid state, 39(11), 1997, pp. 1789-1790
Citations number
11
Journal title
Physics of the solid state → ACNP
ISSN journal
10637834
Volume
39
Issue
11
Year of publication
1997
Pages
1789 - 1790
Database
ISI
SICI code
1063-7834(1997)39:11<1789:TOIDIC>2.0.ZU;2-3
Abstract
Calculations of the total energy of oxygen and carbon impurities in si licon at T = 0 K are presented. The equilibrium position of point defe cts is determined for low (10(-3) -10(-2) at. %) concentrations. (C) 1 997 American Institute of Physics.