Ya. Aleshchenko et al., GEOMETRICAL PARAMETER FLUCTUATIONS AND LOCALIZED ELECTRONIC STATES INQUANTUM-SCALE STRUCTURES, Semiconductor science and technology, 12(12), 1997, pp. 1565-1573
Electronic states of natural quantum dots formed by fluctuations of qu
antum wells and barrier widths in quantum-scale structures have been s
tudied both experimentally and theoretically. An approximate method ba
sed on the reduction of the 3D problem to a 1D one has been developed
to calculate the electronic spectrum of quantum dots of arbitrary shap
e. It was shown using this method that narrow equidistant peaks in spa
tially resolved photoluminescence spectra of GaAs/AlxGa1-xAs superlatt
ices with thin barriers could be a consequence of the formation of a n
ew type of electronic states resulting from the overlap of thickness f
luctuations of neighbouring quantum wells. The equidistant spectrum of
new states is explained by a nearly parabolic dependence of the overl
ap region width on coordinate in the layer plane. Quantitative calcula
tions of electronic states of quantum dots and quantum wires of some s
pecific shapes were also performed. The inverse problem of finding the
profile of a cylindrical quantum dot possessing an equidistant energy
spectrum was solved.