INDIRECT EXCHANGE BETWEEN MAGNETIC-IMPURITIES VIA THE INHOMOGENEOUS ELECTRON-GAS IN A GA1-XALXAS GAAS SYMMETRICAL DOUBLE-QUANTUM-WELL UNDERA LONGITUDINAL ELECTRIC-FIELD/

Authors
FERREIRA LG LIMA ICD TROPER A
Citation
Lg. Ferreira et al., INDIRECT EXCHANGE BETWEEN MAGNETIC-IMPURITIES VIA THE INHOMOGENEOUS ELECTRON-GAS IN A GA1-XALXAS GAAS SYMMETRICAL DOUBLE-QUANTUM-WELL UNDERA LONGITUDINAL ELECTRIC-FIELD/, Semiconductor science and technology, 12(12), 1997, pp. 1592-1595
Citations number
13
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
12
Issue
12
Year of publication
1997
Pages
1592 - 1595
Database
ISI
SICI code
0268-1242(1997)12:12<1592:IEBMVT>2.0.ZU;2-G
Abstract
The indirect interaction between two magnetic impurities in a Ga1-xAlx As/AlAs double quantum well under a strong electric field perpendicula r to the interfaces is obtained as a function of the field strength an d the barrier width. We show that, if a single state is bound to the w ell, the exchange energy factorizes as a form factor depending on the quantum well structural parameters and a two-dimensional RKKY interact ion. We obtained a fast decrease of the exchange with the barrier widt h for the impurities lying in different wells.