INFRARED PHOTOREFLECTANCE OF INAS

Authors
LIN CH SINGER KE EVANSFREEMAN JH HEATH K MISSOUS M
Citation
Ch. Lin et al., INFRARED PHOTOREFLECTANCE OF INAS, Semiconductor science and technology, 12(12), 1997, pp. 1619-1624
Citations number
20
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
12
Issue
12
Year of publication
1997
Pages
1619 - 1624
Database
ISI
SICI code
0268-1242(1997)12:12<1619:IPOI>2.0.ZU;2-5
Abstract
Photoreflectance (PR) has been used for the first time for the measure ment of the fundamental energy gaps of a narrow gap semiconductor (InA s) and demonstrated to be capable of determining both the bandgap and the spin-orbit split-off energy. The measurements reported in this pap er give a value for the spin split-oft energy for p-type InAs as 367 /- 2 meV. The assignment of the feature to the spin split-off band is supported by the observation that this value is found to be independen t of temperature.