DESIGN OPTIMIZATION OF A SINGLE-SIDED SI SIGE HETEROSTRUCTURE MIXED TUNNELING AVALANCHE TRANSIT-TIME DOUBLE DRIFT REGION/

The potential of an Si/SiGe heterostructure mixed tunnelling avalanche transit time double drift region (DDR) with an SiGe layer on the p si de alone is investigated. Our results indicate that this newly propose d structure has better mm wave properties and lower noise than the Si homostructure diode and Si/SiGe heterostructure diode with an SiGe lay er on both n and p sides. Further, our results show that the diode pro perties are optimized for a particular width of the SiGe layer in the single-sided Si/SiGe heterostructure DDR.