CHARACTERIZATION OF CUINTE2 THIN-FILMS PREPARED BY FLASH EVAPORATION

Thin films of CuInTe2 were grown by flash evaporation. The influence o f the substrate temperature T-s during film deposition on the properti es of the thin films was examined. CuInTe2 films were structurally cha racterized by the grazing incidence x-ray diffraction (GIXD) technique . Investigation by this technique demonstrates that the surface of thi n films of CuInTe2 prepared by flash evaporation at T-s greater than o r equal to 100 degrees C exhibits the chalcopyrite structure with addi tional binary compounds in the surface. However, in the volume the fil ms exhibit the chalcopyrite structure only; no foreign phases were obs erved. X-ray reflectometry was utilized to evaluate the critical refle ction angle beta(c) of CuInTe2 (beta(c)(CuInTe2) approximate to 0.32 d egrees) which permitted us to calculate the density of the films to be rho approximate to g cm(-3). The evaporated films were p type and the films deposited at T-s = 100 degrees C had a resistivity in the range 0.3-2 Omega cm. From optical measurements we have determined the opti cal energy gap E-g approximate to 0.94 eV and the effective reduced ma ss m(r)() approximate to 0.07m(e).