A 1 4-INCH 330K SQUARE PIXEL PROGRESSIVE SCAN CMOS ACTIVE PIXEL IMAGESENSOR/

In this paper, three pixel structures have been studied as candidates to realize high density CMOS active pixel sensors, A novel cell struct ure, the ''I-shaped'' cell, in which the active regions are formed alo ng a straight line, has been proposed for high-packing density devices , The ''-shaped'' cells can realize minimum cell area of 16F(2), 14F(2 ), and 14F(2) (F: design rule) for three-transistor-type, two-transist or-type, and one-transistor-type pixels, respectively, A 1/4-inch form at progressive scan CMOS active pixel sensor,vith 640 (H) x 480 (V) pi xels has been fabricated using a 0.6-mu m CMOS process, The sensor ope rates with 5.0 V single power supply, and power consumption is below 3 0 mW.