DEGRADATION OF SIGE DEVICES BY PROTON IRRADIATION

Authors
OHYAMA H VANHELLEMONT J TAKAMI Y SUNAGA H NASHIYAMA I UWATOKO Y POORTMANS J CAYMAX M
Citation
H. Ohyama et al., DEGRADATION OF SIGE DEVICES BY PROTON IRRADIATION, Radiation physics and chemistry, 50(4), 1997, pp. 341-346
Citations number
8
Journal title
Radiation physics and chemistry → ACNP
ISSN journal
0969806X
Volume
50
Issue
4
Year of publication
1997
Pages
341 - 346
Database
ISI
SICI code
0969-806X(1997)50:4<341:DOSDBP>2.0.ZU;2-6
Abstract
The degradation and recovery behavior of strained Si1-xGex diodes and heterojunction bipolar transistors (HBTs) irradiated by protons are st udied. The degradation of device performance and the generation of lat tice defects are reported as a function of fluence and also compared e xtensively with previous results obtained on electron and neutron irra diated devices. The radiation source dependence of the degradation is discussed taking into account the number of knock-on atoms and the non ionizing energy loss (NIEL). (C) 1997 Elsevier Science Ltd.