SURFACE MODIFICATION OF INAS(110) SURFACE BY LOW-ENERGY ION SPUTTERING

Sputter-induced electronic stales and stoichiometry at the low ion-ene rgy sputter-annealed InAs(110) surface compared to cleaved InAs(110) h ave been studied by Auger and UV photoelectron spectroscopy. Sputterin g modifies the surface electronic structure even with 0.5 keV Ar+ ions . In particular, InAs(110) surface states are quenched, while sputter- induced electronic states in the band gap close to the Fermi level are present. After the sputtering process a variation of the In bonding c oordination is observed in the surface and subsurface region while mai ntaining the correct average stoichiometry. Subsequent annealing induc es a reordering process and a light accumulation layer in the subsurfa ce region. (C) 1997 Elsevier Science B.V.