RHEED INTENSITY OSCILLATIONS OBSERVED DURING THE GROWTH OF YSI2-X ON SI(111) SUBSTRATES

For the first time reflection high-energy electron diffraction intensi ty oscillations were observed during reactive deposition epitaxy (RDE) growth of YSi2-x (x congruent to 0.3) on the Si(111) surface. The YSi 2-x crystallographic structure consists of Y planes alternating with S i planes parallel to the Si(111) substrate planes. The intensity of th e reflected beam is calculated by solving the one-dimensional Schrodin ger equation. A birth-death model was used for the growth simulation i n order to investigate fundamental behaviours of reflectivity change d uring the growth of YSi2-x on the Si(111) surface. (C) 1997 Elsevier S cience B.V.