PHOTOLUMINESCENCE DUE TO HOLE CAPTURING OF DX- CENTERS IN IN0.32GA0.68P-S

Authors
LEE NY HWANG I KIM JE PARK HY KWON HK CHOE BD LIM H
Citation
Ny. Lee et al., PHOTOLUMINESCENCE DUE TO HOLE CAPTURING OF DX- CENTERS IN IN0.32GA0.68P-S, Solid state communications, 105(1), 1998, pp. 1-5
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
105
Issue
1
Year of publication
1998
Pages
1 - 5
Database
ISI
SICI code
0038-1098(1998)105:1<1:PDTHCO>2.0.ZU;2-T
Abstract
The photoluminescence (PL) characteristics of S-doped In0.32Ga0.68P ep ilayer grown by liquid phase epitaxy have been studied in the temperat ure range of 20-300 K. In addition to the two peaks of the near band-e dge emission and the donor-to-acceptor transition, a third peak of 2.1 99 eV at 74 K is observed in a narrow sample temperature range. It is shown that the appearance of this peak is related to the DX centers. T he transition is attributed to the recombination of the neutral donor with a hole bound to the DX- center. (C) 1997 Elsevier Science Ltd.