2 REGIMES BEHAVIOR IN THE RESISTIVITY OF THE LA1.85SR0.15CU1-XLIXO4 SYSTEM - A SIGNATURE OF DIFFERENT ELECTRONIC STATES FOR HOLES

Citation
S. Garcia et al., 2 REGIMES BEHAVIOR IN THE RESISTIVITY OF THE LA1.85SR0.15CU1-XLIXO4 SYSTEM - A SIGNATURE OF DIFFERENT ELECTRONIC STATES FOR HOLES, Solid state communications, 105(1), 1998, pp. 37-40
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
105
Issue
1
Year of publication
1998
Pages
37 - 40
Database
ISI
SICI code
0038-1098(1998)105:1<37:2RBITR>2.0.ZU;2-A
Abstract
The variations of the normal-state resistivity and the superconducting transition temperature T-c of the La1.85Sr0.15(Cu1-xLix)O-4 system fo r 0 less than or equal to x less than or equal to 0.05 reveal a two re gimes behavior, with x congruent to 0.03 being the critical concentrat ion for a transition from a delocalized state, with a reduction of the resistivity values while T-c remains unchanged, to an early stage of a spin compensation process, characterized by T-c suppression without broadening. Disorder at the Cu-O-2 planes is proposed to be the source of localization and T-c depletion, as supported by fitting of the nor mal-state curves according to different conduction models. (C) 1997 El sevier Science Ltd.