IR AND UV LASER-INDUCED PHOTOLYSIS OF 2-CHLOROETHENYLSILANE

Citation
M. Castillejo et al., IR AND UV LASER-INDUCED PHOTOLYSIS OF 2-CHLOROETHENYLSILANE, Journal of photochemistry and photobiology. A, Chemistry, 110(2), 1997, pp. 107-113
Citations number
14
Categorie Soggetti
Chemistry Physical
ISSN journal
10106030
Volume
110
Issue
2
Year of publication
1997
Pages
107 - 113
Database
ISI
SICI code
1010-6030(1997)110:2<107:IAULPO>2.0.ZU;2-D
Abstract
The laser-induced decomposition of 2-chloroethenylsilane was studied i n the IR with a TEA CO2 laser and in the UV with a narrow-band, freque ncy-doubled dye laser at 212.5 nm. Silylene was observed in the LR mul tiphoton dissociation (MPD) via laser-induced fluorescence (LIE). The nascent silylene fragments are vibrationally excited in the bending mo de. Multiphoton UV photolysis yields a fluorescence emission spectrum originating from the SiH (A(2) Delta --> (XII)-I-2) Delta upsilon = 0 system, with several atomic Si transitions and molecular bands corresp onding to C-2 (d(3)II(g) --> a(3)II(u)) Delta upsilon = 2, 1, 0, -1 an d -2 transitions. The simulation of the spectra originating from diato mic fragments indicates that these possess a high content of internal energy, A high population of Si triplet states is observed. (C) 1997 E lsevier Science S.A.