M. Nogami et T. Hayakawa, PERSISTENT SPECTRAL HOLE-BURNING OF SOL-GEL-DERIVED EU3-DOPED SIO2 GLASS(), Physical review. B, Condensed matter, 56(22), 1997, pp. 14235-14238
Persistent spectral hole burning (PSHB) was observed at temperatures h
igher than 77 K in the sol-gel-derived Eu3+-doped SiO2 glasses. 1Eu(2)
O(3) . 99SiO(2) (mole ratio) glass was prepared by heating gel synthes
ized from metal alkoxides at 400 to 1000 degrees C. The hole was burne
d in the F-7(0)-->D-5(0) line of Eu3+ ions by means of a Rhodamine 6G
dye laser at 77 K and the burnt hole depth was measured as a function
of temperature. The hole depth increased with increasing OH content in
the glass. It was found that the hole burnt at 77 K was thermally fil
led and an average thermal barrier height for the hole filling was sim
ilar to 0.3 eV, which was higher for the glass heated at high temperat
ure, indicating that the stable hole is burned with the increased heat
-treatment temperature. It was concluded that the PSHB was formed by t
he optically activated rearrangement of proton in the first coordinati
ng sphere of the Eu3+ ions.